Semiconductor device of high breakdown voltage

Details Semiconductor device of high breakdown voltage Semiconductor device of high breakdown voltage

1989-10-26

1991-02-05

Mintel, William

357 23110, 357 23400, H01L 2968, H01L 2978

Patent

active

049909827

ABSTRACT:
The semiconductor device is of high break down voltage type and has a source, drain and a gate deposited therebetween on the semiconductor substrate. The gate oxide film has a thick portion and below that portion, a doped layer as a drain is provided with two layers having different impurity concentration.

REFERENCES:
patent: 3783047 (1974-01-01), Paffen et al.
patent: 3899372 (1975-08-01), Esch et al.
patent: 4023195 (1977-05-01), Richman
patent: 4285116 (1981-08-01), Meguro
patent: 4506279 (1985-03-01), Mizutani
patent: 4613883 (1986-09-01), Tihanyi
patent: 4613886 (1986-09-01), Chwang
patent: 4769686 (1988-09-01), Horiuchi et al.
patent: 4794436 (1988-12-01), Blanchard
IEEE transactions on Electron Devices, "A Novel CMOS-Compatible High Voltage Transistor Structure", by S. Parpia et al., vol. ED-33, No. 12, Dec. 1986, pp. 1948-1952.

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