Semiconductor device microstructure

Measuring and testing – Volume or rate of flow – Thermal type

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

338308, 338319, 357 55, G01F 168

Patent

active

046961887

ABSTRACT:
A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises member means comprising first and second thermal-to-electric transducer or static electric element, the member means having a predetermined configuration suspended over the depression. The member means is connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the elements and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the transducer or element and the semiconductor body.

REFERENCES:
patent: 3359462 (1967-12-01), Schutze
patent: 3758830 (1973-09-01), Jackson
patent: 3881181 (1975-04-01), Khajezadeh
patent: 3938384 (1976-02-01), Blair
patent: 3986200 (1976-10-01), Allison
patent: 3992940 (1976-11-01), Platzer, Jr.
patent: 3996799 (1976-12-01), van Putten
patent: 4011745 (1977-03-01), Gatos et al.
patent: 4071838 (1978-01-01), Block
patent: 4129848 (1978-12-01), Frank et al.
patent: 4134095 (1979-01-01), Reddy
patent: 4172005 (1979-10-01), Muraoka
patent: 4182937 (1980-01-01), Greenwood
patent: 4229979 (1982-10-01), Greenwood
patent: 4244225 (1981-01-01), Greenwood
patent: 4293373 (1981-10-01), Greenwood
patent: 4305298 (1981-12-01), Greenwood
patent: 4343768 (1982-08-01), Kimura
patent: 4371861 (1983-02-01), Abdelrahman et al.
patent: 4400681 (1983-08-01), Brown et al.
patent: 4471647 (1983-09-01), Jerman et al.
Bassous, Ernest, "Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon," IEEE Transactions on Electron Devices, vol. ed. 25, No. 10, Oct. 1978, pp. 1178-1185.
Jackson, T. N. et al, "An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures," IEEE Transactions on Electron Devices, vol. EDL-2, No. 2, Feb. 1981, pp. 44-45.
Jolly, Richard D. et al., "Miniature Cantilever Beams Fabricated by Anisotropic Etching of Silicon," J. Electronics Soc., vol. 127, No. 12, Dec. 1980, pp. 2750-2754.
Kimura, M., "Microheater and Microbolometer Using Microbridge of SiO.sub.2 Film on Silicon," Electronics Letters, vol. 17, No. 2, Jan. 22, 1981, pp. 80-82.
Petersen, K. E., "Dynamic Micromechanics on Silicon: Techniques and Devices," IEEE Transactions on Electron Devices, vol. ed. 25, No. 10, Dec. 1978, pp. 1241-1250.
Petersen, K. E., "Micromechanical Light Modulator Array Fabricated on Silicon," Applied Physics Letters, vol. 31, No. 8, Oct. 15, 1977, pp. 521-523.
Petersen, K. E., "Micromechanical Membrane Switches on Silicon," IBM J. Res. Develop., vol. 23, No. 4, Jul. 1979, pp. 376-385.
Pugacz-Muraszkiewicz, I. J., "Detection of Discontinuities in Passivating Layers on Silicon by NaOH Anisotropic Etch," IBM J. Res. Develop., Sep. 1972, pp. 523-529.
Rahnamai, H. et al., "Pyroelectric Anemometers," 1980 International Electron Devices Meeting, Washington, D.C., Dec. 8-10, 1980, pp. 680-684.
Roylance, Lynn M., "A Batch-Fabricated Silicon Accelerometer," IEEE Transaction on Electron Devices, vol. #d. 26, No. 12, Dec. 1979, pp. 1911-1917.
Terry, Stephen C. et al., "A Gas Chromatographic Air Analyzer Fabricated on a Silicon Wafer," IEEE Transactions on Electron Devices, vol. ed. 26, Dec. 1979, pp. 1880-1886.
Terry, Stephen C. et al., "A Pocket-Sized Personal Air Contaminant Monitor," 175th National Meeting of the American Chemical Society, Mar. 15, 1978.
Teschler, Leland, "Ultraminiature Mechanics," Machine Design, Jan. 8, 1981, pp. 112-117.
Van Putten, A. F. P. et al., "Integrated Silicon Anemometer," Electronics Letters, vol. 10, No. 21, Oct. 17, 1974, pp. 425-426.
Van Riet, R. W. M. et al., "Integrated Direction-Sensitive Flowmeter," Electronics Letters, vol. 12, No. 24, Nov. 25, 1976, pp. 647-648.
Bassous, E. et al, "The Fabrication of High Precision Nozzles by the Anisotropic Etching of (100) Silicon", IBM Thomas J. Watson Research Center, Yorktown, N.Y., p. 1321-1327.
Bassous, E. et al, "Ink Jet Printing Nozzle Arrays Etched in Silicon", IBM Thomas J. Watson Research Center, Yorktown, N.Y., vol. 31, No. 2, Jul. 1977.
Petersen, K. E., "Bistable Micromechanical Storage Element in Silicon", IBM Technical Disclosure Bulletin, vol. 20, No. 12, May 1978.
Petersen, K. E., "Micromechanical Generation of Acoustic Waves", IBM Technical Disclosure Bulletin, vol. 22, No. 9, Feb. 1980.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device microstructure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device microstructure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device microstructure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1583744

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.