Semiconductor device, method of manufacturing the same and appli

Details Semiconductor device, method of manufacturing the same and appli Semiconductor device, method of manufacturing the same and appli

1979-02-06

1981-10-06

Wojciechowicz, Edward J.

Metal treatment

Stock

Ferrous

357 13, 357 20, 357 51, 148187, 29577E, H01L 2702

Patent

active

042938686

ABSTRACT:
This invention relates to a power transistor which includes a driving transistor and an output transistor in the Darlington connection. This invention has for its object to prevent the power transistor from being destroyed by a surge in such a way that a surge destruction-preventing Zener diode is connected between the base and the collector or the emitter of the power transistor. Especially, it is intended to dispose the Zener diode within a semiconductor substrate together with the power transistor. According to this invention, a p-n junction for the Zener diode is formed between a semiconductor region continuous to a collector region of the transistor and a semiconductor region continuous to a base region thereof. The p-n junction is surrounded by the base region of the transistor, whereby it is formed within a bulk and is prevented from reaching the surface of the semiconductor substrate.

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