Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-12-21
2009-08-18
Thai, Luan C (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S434000, C257S433000, C257S081000
Reexamination Certificate
active
07576402
ABSTRACT:
The invention provides a package type semiconductor device and a method of manufacturing the same where reliability and yield are enhanced without making a manufacturing process complex. A resin layer and a supporting body are formed on a front surface of a semiconductor substrate formed with a pad electrode. Then, the resin layer and the supporting body are removed by etching so as to expose the pad electrode. By this etching, the supporting body in two conductive terminal formation regions facing each other over a dicing line and the supporting body in a region connecting with these regions therebetween are simultaneously removed to form an opening, as shown in FIG.3C. Then, a metal layer is formed on the pad electrode exposed in the opening, and a conductive terminal is further formed thereon. Lastly, dicing is performed along the dicing line to separate the semiconductor substrate in individual semiconductor dies.
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European Search Report mailed May 29, 2008 directed to counterpart EP Application No. 06026547.7 (6 pages).
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
Thai Luan C
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