Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2011-08-23
2011-08-23
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S428000, C257S427000, C257S414000, C257SE29323, C438S048000, C438S057000
Reexamination Certificate
active
08004054
ABSTRACT:
A semiconductor device (100) including: a semiconductor substrate including a semiconductor chip formation region (102); a chip internal circuit (124); a signal transmitting/receiving inductor (114) which transmits/receives a signal to/from an outside in a non-contact manner by electromagnetic induction, and transmits/receives a signal to/from the chip internal circuit (124) through electrical connection to the chip internal circuit (124); and a power receiving inductor (112) which has a diameter provided along an outer edge of the semiconductor chip formation region (102) so as to surround the chip internal circuit (124) and the signal transmitting/receiving inductor (114), receives a power supply signal from the outside in the non-contact manner, and is electrically connected to the chip internal circuit (124). Accordingly, power supply can be sufficiently made in the non-contact manner while limiting an increase in chip size when various signals are transmitted/received in the non-contact manner.
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Chinese Office Action dated Dec. 14, 2010 (with English translation).
Ligai Maria
McGinn IP Law Group PLLC
Pham Thanh V
Renesas Electronics Corporation
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