Semiconductor device, method of manufacturing the same, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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Details

C257S428000, C257S427000, C257S414000, C257SE29323, C438S048000, C438S057000

Reexamination Certificate

active

08004054

ABSTRACT:
A semiconductor device (100) including: a semiconductor substrate including a semiconductor chip formation region (102); a chip internal circuit (124); a signal transmitting/receiving inductor (114) which transmits/receives a signal to/from an outside in a non-contact manner by electromagnetic induction, and transmits/receives a signal to/from the chip internal circuit (124) through electrical connection to the chip internal circuit (124); and a power receiving inductor (112) which has a diameter provided along an outer edge of the semiconductor chip formation region (102) so as to surround the chip internal circuit (124) and the signal transmitting/receiving inductor (114), receives a power supply signal from the outside in the non-contact manner, and is electrically connected to the chip internal circuit (124). Accordingly, power supply can be sufficiently made in the non-contact manner while limiting an increase in chip size when various signals are transmitted/received in the non-contact manner.

REFERENCES:
patent: 6378774 (2002-04-01), Emori et al.
patent: 7355270 (2008-04-01), Hasebe et al.
patent: 2005/0173532 (2005-08-01), Hasebe et al.
patent: 2006/0202831 (2006-09-01), Horch
patent: 2007/0229279 (2007-10-01), Yamazaki et al.
patent: 2005-30877 (2005-02-01), None
patent: 2005-228785 (2005-08-01), None
patent: 2005-311331 (2005-11-01), None
patent: 2007-134694 (2007-05-01), None
Chinese Office Action dated Dec. 14, 2010 (with English translation).

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