Semiconductor device, method of manufacturing the same,...

Details Semiconductor device, method of manufacturing the same,... Semiconductor device, method of manufacturing the same,...

2007-11-20

2007-11-20

Lee, Calvin (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C438S668000

Reexamination Certificate

active

11258420

ABSTRACT:
A semiconductor device is disclosed that includes an interposer and a semiconductor chip. The interposer includes a Si substrate; multiple through vias provided through an insulating material in corresponding through holes passing through the Si substrate; a thin film capacitor provided on a first main surface of the Si substrate so as to be electrically connected to the through vias; and multiple external connection terminals provided on a second main surface of the Si substrate so as to be electrically connected to the through vias. The second main surface faces away from the first main surface. The semiconductor chip is provided on one of the first main surface and the second main surface so as to be electrically connected to the through vias. The Si substrate has a thickness less than the diameter of the through holes.

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patent: 6853051 (2005-02-01), Shioga et al.
patent: 7161793 (2007-01-01), Kurihara et al.
patent: 2000-323845 (2000-11-01), None
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patent: 2004-193614 (2004-07-01), None
patent: 2004-273825 (2004-09-01), None

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