Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2006-12-05
2006-12-05
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S460000
Reexamination Certificate
active
07144760
ABSTRACT:
A wiring pattern is formed over a semiconductor wafer, in which an interconnect is formed from an integrated circuit, from a pad which is a part of the interconnect, and an external terminal is formed on the wiring pattern. A resin layer is formed on the semiconductor wafer. A mask layer having an opening pattern is formed on the resin layer. A part of the resin layer is removed in a state in which the mask layer is disposed on the resin layer to form an opening in the resin layer. The semiconductor wafer is cut along the opening.
REFERENCES:
patent: 6333565 (2001-12-01), Hashimoto
patent: 6389689 (2002-05-01), Heo
patent: 6707153 (2004-03-01), Kuwabara et al.
patent: 6897127 (2005-05-01), Hanaoka
patent: 2002/0008320 (2002-01-01), Kuwabara et al.
patent: 2003/0109079 (2003-06-01), Yamaguchi et al.
patent: A 10-027971 (1998-01-01), None
patent: A 11-297873 (1999-10-01), None
patent: A 2000-243754 (2000-09-01), None
patent: WO 01/71805 (2001-09-01), None
U.S. Appl. No. 09/700,464, filed Nov. 15, 2000, Hanaoka.
U.S. Appl. No. 10/654,449, filed Sep. 4, 2003, Hanaoka.
U.S. Appl. No. 10/679,467, filed Oct. 7, 2003, Hanaoka.
Lindsay Jr. Walter L.
Seiko Epson Corporation
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