Semiconductor device, method of manufacturing the same,...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

Reexamination Certificate

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C438S460000

Reexamination Certificate

active

07144760

ABSTRACT:
A wiring pattern is formed over a semiconductor wafer, in which an interconnect is formed from an integrated circuit, from a pad which is a part of the interconnect, and an external terminal is formed on the wiring pattern. A resin layer is formed on the semiconductor wafer. A mask layer having an opening pattern is formed on the resin layer. A part of the resin layer is removed in a state in which the mask layer is disposed on the resin layer to form an opening in the resin layer. The semiconductor wafer is cut along the opening.

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U.S. Appl. No. 09/700,464, filed Nov. 15, 2000, Hanaoka.
U.S. Appl. No. 10/654,449, filed Sep. 4, 2003, Hanaoka.
U.S. Appl. No. 10/679,467, filed Oct. 7, 2003, Hanaoka.

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