Semiconductor device, method of manufacturing the same,...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S081000, C257S098000, C257S099000, C257S432000

Reexamination Certificate

active

06982470

ABSTRACT:
A method of manufacturing a semiconductor device includes (a) fixing a cover onto a semiconductor substrate so as to place a surface of the cover that includes a portion defining a first opening, face to face on a surface of the semiconductor substrate that includes an electrode and (b) applying an adhesive to the inside of the first opening.

REFERENCES:
patent: 5798557 (1998-08-01), Salatino et al.
patent: 5889323 (1999-03-01), Tachibana
patent: 5998862 (1999-12-01), Yamanaka
patent: 6594153 (2003-07-01), Zu et al.
patent: 6727431 (2004-04-01), Hashimoto
patent: 2003/0122137 (2003-07-01), Hashimoto
patent: 2003/0123779 (2003-07-01), Hashimoto
patent: 2003/0124762 (2003-07-01), Hashimoto
patent: 5-110960 (1993-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device, method of manufacturing the same,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, method of manufacturing the same,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, method of manufacturing the same,... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3567119

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.