Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2002-08-23
2004-04-06
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
C438S502000
Reexamination Certificate
active
06716675
ABSTRACT:
TECHNICAL FIELD
The present invention relates to a semiconductor device, a manufacturing method thereof, a lead frame, a manufacturing method thereof, and a manufacturing method of a semiconductor device using a lead frame, and more particularly, to a leadless surface-mount resin-sealing semiconductor device, a manufacturing method thereof, a lead frame, a manufacturing method thereof, and a manufacturing method of a semiconductor device using a lead frame.
Recently, as electronic apparatuses become smaller and highly functional, semiconductor devices provided in these electronic apparatuses also become smaller and thinner at a rapid pace. When semiconductor devices become smaller and thinner, it becomes difficult to efficiently dissipate heat generated in a semiconductor element.
Thus, a new structure to efficiently dissipate heat generated in a semiconductor element is desired even for semiconductor devices made smaller and thinner.
BACKGROUND ART
FIG.
1
and
FIG. 2
show conventional semiconductor devices
10
A and
10
B.
Each of the semiconductor devices
10
A and
10
B shown in the respective figures has a considerably simple structure comprising a semiconductor element
11
, a wire
12
, a terminal
15
, a resin package
16
and so forth. A resin projection
18
protruding downward from a mount surface
16
a
of the resin package
16
is formed unitarily with each of the semiconductor devices
10
A and
10
B The resin projection
18
is coated with a metal film
19
so as to form the terminal
15
.
Additionally, in the semiconductor device
10
B shown in
FIG. 2
, a backside terminal
17
is formed on the mount surface
16
a
of the resin package
16
. This backside terminal
17
is a conductive metal film as is the metal film
19
, and is so structured as to be electrically connected to a ground terminal on a mounting substrate (not shown in the figures) upon mounting the semiconductor device
10
B on the mounting substrate. Accordingly, in the mounting state, the backside terminal
17
functions as a shield member shielding the semiconductor element
11
so as to improve electric characteristics of the semiconductor device
10
B.
Since the semiconductor devices
10
A and
10
B structured as above are not provided with an inner lead and an outer lead as in an SSOP, an area for drawing around from the inner lead to the outer lead and an area of the outer lead per se become unnecessary so as to miniaturize the semiconductor devices
10
A and
10
B.
Additionally, a loading substrate (an interposer) for forming a solder ball, such as a BGA (Ball Grid Array), also becomes unnecessary so as to reduce costs of the semiconductor devices
10
A and
10
B. Further, the terminal
15
composed of the resin projection
18
and the metal film
19
exhibits a function equivalent to a solder ball in co-operation so as to obtain a mounting property similar to a semiconductor device of a BGA type.
By the way, as the semiconductor element
11
becomes highly dense recently, an amount of heat generated in the semiconductor element
11
tends to increase. However, since a coefficient of thermal conductivity of resin is low in a resin-sealing semiconductor device, a heat-dissipation characteristic becomes inferior.
Additionally, since the terminal
15
is structured by coating the resin projection
18
with the metal film
19
in the semiconductor devices
10
A and
10
B shown in FIG.
1
and
FIG. 2
, an amount of heat dissipation from a mounting terminal is as small as a BGA having a solder ball as a mounting terminal and a QFP (Quad Flat Package) having a lead as a mounting terminal. Therefore, although the semiconductor devices
10
A and
10
B shown in FIG.
1
and
FIG. 2
have the above-mentioned favorable characteristics, the semiconductor devices
10
A and
10
B have insufficient heat-dissipation characteristics so as to incur a problem that a malfunction is caused in the semiconductor element
11
by the generated heat.
DISCLOSURE OF INVENTION
It is a general object of the present invention to provide an improved and useful semiconductor device, a manufacturing method thereof, a lead frame, a manufacturing method thereof, and a manufacturing method of a semiconductor device using a lead frame in which the above-mentioned problems are eliminated.
A more specific object of the present invention is to provide a semiconductor device capable of efficiently dissipating heat generated in a semiconductor element, a manufacturing method thereof, a lead frame, a manufacturing method thereof, and a manufacturing method of a semiconductor device using a lead frame.
In order to achieve this object, the present invention, which is a semiconductor device comprising a semiconductor element, a resin package sealing the foregoing semiconductor element, a plurality of resin projections formed on a mount side of the foregoing resin package so as to protrude thereon, a metal film provided on the foregoing resin projection, and a wire electrically connecting an electrode pad on the foregoing semiconductor element and the foregoing metal film to each other, is characterized in that a heat-dissipation member is provided opposite the foregoing semiconductor element so as to dissipate heat generated from the foregoing semiconductor element, and a projection amount of the foregoing heat-dissipation member from the foregoing mount surface is arranged to be equal to or smaller than a projection amount of the foregoing resin projection including the foregoing metal film.
According to the present invention, the heat-dissipation member dissipating heat generated from the semiconductor element is provided opposite the semiconductor element such that the heat generated in the semiconductor element is dissipated at the heat-dissipation member. Therefore, the semiconductor element can be cooled efficiently so as to prevent a malfunction from occurring in the semiconductor element.
Additionally, since the projection amount of the heat-dissipation member from the mount surface is arranged to be equal to or smaller than the projection amount of the resin projection including the metal film, the heat-dissipation member does not thwart a joining of the metal film and a mounting substrate upon mounting the semiconductor device.
Additionally, in the above-mentioned semiconductor device, the present invention is characterized in that the foregoing heat-dissipation member is a metal plate formed of a lead-frame material.
According to the present invention, the heat-dissipation member is provided as the metal plate formed of the lead-frame material so as to obtain an excellent heat-dissipation characteristic because the lead-frame material has a high coefficient of thermal conductivity.
Additionally, in the above-mentioned semiconductor device, the present invention is characterized in that at least one metal layer is provided between the foregoing semiconductor element and the foregoing heat-dissipation member, and the foregoing heat-dissipation member is fixed to the foregoing metal layer by bonding.
According to the present invention, at least one metal layer is provided between the semiconductor element and the heat-dissipation member, and the heat-dissipation member is fixed to the metal layer by bonding so that a material having an excellent adhesiveness can be used as the metal layer so as to fix the heat-dissipation member firmly. In addition, since the metal layer per se has a thermal conductivity, the heat generated in the semiconductor element can be efficiently transferred by thermal conduction to the heat-dissipation member.
Additionally, in order to achieve the above-mentioned object, the present invention, which is a semiconductor device comprising a semiconductor element, a resin package sealing this semiconductor element, a plurality of resin projections formed in a peripheral form on a mount side of this resin package so as to protrude thereon, a metal film provided on this resin projection, a backside terminal formed inside positions on the foregoing mount side at which the foregoing resin projections are p
Fujisaki Fumitoshi
Maki Shinichiro
Takehiro Masao
Waki Masaki
Dang Phuc T.
Westerman Hattori Daniels & Adrian LLP
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