Patent
1974-08-29
1976-08-24
Edlow, Martin H.
357 55, 357 36, H01L 2702, H01L 2906
Patent
active
039770206
ABSTRACT:
A semiconductor device having a transistor, in particular a power transistor, of the planar type which comprises a distributed base-series resistor for safety against second breakdown. According to the invention the base resistor is formed in that a resistance-increasing region which is present beyond the emitter zone and substantially entirely surrounds the inner contact surface is present in the base zone between the contact surfaces of the emitter and base electrode layers surrounding each other along substantially the whole edge of the emitter-base junction.
REFERENCES:
patent: 3751726 (1973-08-01), Einthoven
Enzlin Theodoor Henri
Smulders Walter Henricus Maria Magdala
Edlow Martin H.
Nigohosian Leon
Trifari Frank R.
U.S. Philips Corporation
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