Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2006-01-23
2008-10-07
Toledo, Fernando L (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S554000
Reexamination Certificate
active
07432581
ABSTRACT:
An FTI structure is employed in an isolation region making contact in a Y direction with a P-type impurity region serving as a drain region of a PMOS transistor. First, second and third N-type impurity layers serving as body regions are connected to a high potential line via fourth, fifth and sixth N-type impurity layers, respectively, and further via a seventh N-type impurity layer. The fourth to sixth N-type impurity layers are provided between an insulating layer of an SOI substrate and an element isolation insulating film in a PTI region.
REFERENCES:
patent: 5612564 (1997-03-01), Fujishima et al.
patent: 6740958 (2004-05-01), Nakazato et al.
patent: 6864559 (2005-03-01), Nakazato et al.
patent: 7122859 (2006-10-01), Shimotsusa
patent: 2002/0125511 (2002-09-01), Shimotsusa
patent: 2003/0178699 (2003-09-01), Nakazato et al.
patent: 2003/0198083 (2003-10-01), Akaogi et al.
patent: 2006/0097380 (2006-05-01), Sato
patent: 2007/0085596 (2007-04-01), Ito
patent: 2007/0155052 (2007-07-01), Terasawa et al.
patent: 2007/0176673 (2007-08-01), Ito
patent: 11-340472 (1999-12-01), None
patent: 2000-243973 (2000-09-01), None
patent: 2002-217420 (2002-08-01), None
patent: 2004-193146 (2004-07-01), None
Ippoushi Takashi
Kanamoto Toshiki
Watanabe Tetsuya
Yoshida Masumi
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
Toledo Fernando L
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