Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-01-08
2008-01-08
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S064000, C257S065000, C257S066000, C257S069000, C257S070000, C257S347000, C257S072000, C257S059000, C257SE21413, C257SE21414, C257SE29117
Reexamination Certificate
active
07317207
ABSTRACT:
To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
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Miyao Masanobu
Nakagawa Kiyokazu
Park Seang-kee
Sugii Nobuyuki
Yamaguchi Shin'ya
Antonelli, Terry Stout & Kraus, LLP.
Erdem Fazli
Hitachi , Ltd.
Purvis Sue A.
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