Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-03-22
2011-03-22
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S202000, C257SE21423, C257SE21679, C257SE27103, C257SE29309
Reexamination Certificate
active
07911027
ABSTRACT:
It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit.The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.
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Japanese Office Action, with English translation, issued in Japanese Patent Application No. JP 2001-356279, mailed Jan. 9, 2008.
Benno Hiroshi
Honma Junko
Itoh Mitsumi
Sawada Masatoshi
Shimazaki Kenji
Chiu Tsz K
McDermott Will & Emery LLP
Panasonic Corporation
Smith Zandra
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