Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-05-03
2005-05-03
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S776000
Reexamination Certificate
active
06888250
ABSTRACT:
A semiconductor device has first wiring layers30and a plurality of dummy wiring layers32that are provided on the same level as the first wiring layers30.The semiconductor device defines a row direction, and first virtual linear lines L1extending in a direction traversing the row direction. The row direction and the first virtual linear lines L1define an angle of 2-40 degrees, and the dummy wiring layers32are disposed in a manner to be located on the first virtual linear lines L1.The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines L2extending in a direction traversing the column direction. The column direction and the second virtual linear lines L2define an angle of 2-40 degrees, and the dummy wiring layers32are disposed in a manner to be located on the second virtual linear lines L2.
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Kasuya Yoshikazu
Kawahara Kei
Mori Katsumi
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Vu Hung
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