Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2011-06-28
2011-06-28
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S554000, C257SE29019, C257SE29174
Reexamination Certificate
active
07968970
ABSTRACT:
A semiconductor device is presented, which includes a semiconductor substrate with a high concentration impurity of a first type conductivity and an epitaxial layer with a low concentration impurity provided on the semiconductor substrate, where a trench coupled to the semiconductor substrate is provided in the epitaxial layer with the low concentration impurity. And the semiconductor device further includes a high concentration impurity region of the first type conductivity having the same type conductivity as the type of the semiconductor substrate formed in at least the epitaxial layer with the low concentration impurity along an inner wall of the trench and coupled to the semiconductor substrate with the high concentration impurity of a first type conductivity, and contacts formed on the high concentration impurity region of the first type conductivity.
REFERENCES:
patent: 4704368 (1987-11-01), Goth et al.
patent: 2006/0076629 (2006-04-01), Yilmaz
patent: 59-232439 (1984-12-01), None
patent: 05-109884 (1993-04-01), None
patent: 11-214398 (1999-08-01), None
Renesas Electronics Corporation
Sughrue & Mion, PLLC
Tran Tan N
LandOfFree
Semiconductor device, method for manufacturing semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, method for manufacturing semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, method for manufacturing semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2652692