Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1997-09-17
1999-09-07
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257197, 257 67, 257 74, H01L 2904, H01L 29737
Patent
active
059490977
ABSTRACT:
The present invention relates to a contact structure not only for a semiconductor device having a hetero-junction bipolar transistor or a hetero-insulated gate field effect transistor but also for semiconductor devices at large. In a semiconductor layer of a polycrystalline or amorphous undoped III-V compound semiconductor or an alloy thereof, a through hole is formed for contact. The size of the through hole is set to permit exposure of at least part of a first conductor layer and a dielectric layer, such as an Si compound, present around the first conductor layer, and a second conductor layer is formed within the through hole so as to contact the first conductor layer. Since the semiconductor layer can be subjected to a selective dry etching for the dielectric layer, the dielectric layer is not etched at the time of forming the above through hole in the semiconductor layer. As a result an electric short-circuit of the second conductor layer with a single crystal semiconductor layer which underlies the dielectric layer can be prevented.
REFERENCES:
patent: 4758896 (1988-07-01), Ito
patent: 5506427 (1996-04-01), Imai
Amamiya et al, IEDM Dec. 11, 1994 "Microwave in Layers" pp. 199-202.
National Technical Report vol. 39, No. 6, Dec. 1993, M. Yanagihara et al., "AlGaAs/GaAs Heterojunction Bipolar Transistor Operating at Low Voltages for Communication Systems".
Hayama et al., "Submicrometer Fully Self-Aligned AlGaAs/GaAs Heterojunction Bipolar Transistor", IEEE Electron Device Letters, vol. EDL-8, No. 5, May 1987.
Hirata Koji
Masuda Hiroshi
Mochizuki Kazuhiro
Tanoue Tomonori
Uchiyama Hiroyuki
Hitachi , Ltd.
Hitachi ULSI Engineering Co.
Jackson, Jr. Jerome
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