Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-04-26
2005-04-26
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S327000, C257S340000, C257S401000, C257S616000
Reexamination Certificate
active
06885041
ABSTRACT:
A semiconductor device comprises: a channel region14of silicon, a source region26and a drain region26respectively forming junction with the channel region14, and a gate electrode30formed on the channel region14interposing an insulation film16therebetween, either of the source region26and the drain region26being formed of SiGeC, which lattice-matches with silicon. Whereby parasitic resistance between the source region and the drain region can be much decreased.
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Fujitsu Limited
Richards N. Drew
Thomas Tom
Westerman Hattori Daniels & Adrian LLP
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