Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2011-08-09
2011-08-09
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S022000, C438S602000, C438S604000, C257S103000, C257S189000, C257S744000, C257S745000, C257SE21172, C257SE29143, C257SE29144
Reexamination Certificate
active
07993948
ABSTRACT:
A method for fabricating an electrode by (i) depositing a palladium film on a p-type semiconductor layer; (ii) introducing an oxygen gas onto the palladium film to provide an oxygen ambient; (iii) oxidizing the palladium film adjacent to the semiconductor layer by annealing the palladium film in the oxygen ambient; and (iv) forming a palladium oxide film directly in contact with the semiconductor layer.
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Nunoue Shin-ya
Oka Toshiyuki
Saito Shinji
Huynh Andy
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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