Semiconductor device, method for fabricating an electrode,...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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C438S022000, C438S602000, C438S604000, C257S103000, C257S189000, C257S744000, C257S745000, C257SE21172, C257SE29143, C257SE29144

Reexamination Certificate

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07993948

ABSTRACT:
A method for fabricating an electrode by (i) depositing a palladium film on a p-type semiconductor layer; (ii) introducing an oxygen gas onto the palladium film to provide an oxygen ambient; (iii) oxidizing the palladium film adjacent to the semiconductor layer by annealing the palladium film in the oxygen ambient; and (iv) forming a palladium oxide film directly in contact with the semiconductor layer.

REFERENCES:
patent: 5387459 (1995-02-01), Hung
patent: 6239490 (2001-05-01), Yamada et al.
patent: 6586328 (2003-07-01), Adesida et al.
patent: 7009218 (2006-03-01), Sugimoto et al.
patent: 7323724 (2008-01-01), Sugimoto et al.
patent: 2002/0036286 (2002-03-01), Ho et al.
patent: 2003/0034732 (2003-02-01), Aoki et al.
patent: 2004/0159836 (2004-08-01), Sugimoto et al.
patent: 2007/0029568 (2007-02-01), Choo et al.
patent: 1523684 (2004-08-01), None
patent: 1 033 355 (2000-09-01), None
patent: 1 450 414 (2004-08-01), None
patent: 7-153700 (1995-06-01), None
patent: 2001-85736 (2001-03-01), None
patent: 3230463 (2001-09-01), None
patent: 3233258 (2001-09-01), None
patent: 10-2005-0020339 (2005-03-01), None
patent: 514622 (2002-12-01), None
patent: 567516 (2003-12-01), None
patent: 2004 047189 (2004-06-01), None
patent: 2006 014996 (2006-02-01), None

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