Semiconductor device material

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106193J, 106193M, 260 296BM, 428539, 428542, C08L 126, B32B 1518

Patent

active

039718700

ABSTRACT:
This patent discloses a method for making junction-type semiconductor devices in which dopant is introduced into a wafer from a prefabricated source film.

REFERENCES:
patent: 2280135 (1942-04-01), Ward
patent: 2375847 (1945-05-01), Houtz
patent: 2391986 (1946-01-01), Leach
patent: 2993787 (1961-07-01), Sugarman
patent: 3016313 (1962-01-01), Pell
patent: 3271176 (1966-09-01), Chopoorian
patent: 3651008 (1972-03-01), Moser

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