Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2005-09-13
2005-09-13
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S197000, C257S198000
Reexamination Certificate
active
06943387
ABSTRACT:
In a semiconductor device using an emitter top heterojunction bipolar transistor having a planar shape in a ring-like shape, a structure is provided in which a base electrode is present only on an inner side of a ring-like emitter-base junction region. This allows reduction of base/collector junction capacitance per unit emitter area, whereby a semiconductor device having high power adding efficiency and high power gain suitable for a power amplifier can be realized. Further, in a multistage power amplifier including first and second amplifier circuits each having one or more of bipolar transistors, a bipolar transistor in the first amplifier circuit uses an emitter having a planar shape in a rectangular shape, and a bipolar transistor in the second amplifier circuit uses an emitter having a ring-like shape and a base electrode only on the inner side of the emitter.
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Kurokawa Atsushi
Kusano Chushiro
Matsumoto Hidetoshi
Mochizuki Kazuhiro
Ohbu Isao
Renesas Technology Corp.
Schillinger Laura M.
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