Electric heating – Metal heating – By arc
Reexamination Certificate
2006-06-27
2006-06-27
Paschall, Mark (Department: 3742)
Electric heating
Metal heating
By arc
C219S121400, C118S7230FE, C118S7230IR, C156S345240, C156S345250
Reexamination Certificate
active
07067761
ABSTRACT:
A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.
REFERENCES:
patent: 4207137 (1980-06-01), Tretola
patent: 4602981 (1986-07-01), Chen et al.
patent: 5314603 (1994-05-01), Sugiyama et al.
patent: 5415718 (1995-05-01), Ohmi et al.
patent: 5458732 (1995-10-01), Butler et al.
patent: 5472561 (1995-12-01), Williams et al.
patent: 5474648 (1995-12-01), Patrick et al.
patent: 5553396 (1996-09-01), Kato et al.
patent: 5576629 (1996-11-01), Turner et al.
patent: 5643364 (1997-07-01), Zhao et al.
patent: 5665166 (1997-09-01), Deguchi et al.
patent: 5800688 (1998-09-01), Lantsman et al.
patent: 6736931 (2004-05-01), Collins et al.
patent: 63-102333 (1988-05-01), None
patent: 4-130723 (1992-05-01), None
patent: 5-291188 (1993-11-01), None
patent: 60-206028 (1995-10-01), None
patent: 9-219392 (1997-08-01), None
patent: 9-219396 (1997-08-01), None
patent: 2000-100795 (2000-04-01), None
Japanese Patent Office Action dated Nov. 24, 2004, issued in counterpart application JP 11-076352.
Matsumoto Takanori
Narita Masaki
Sato Fumio
Shimonishi Satoshi
Kabushiki Kaisha Toshiba
Paschall Mark
LandOfFree
Semiconductor device manufacturing system for etching a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device manufacturing system for etching a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device manufacturing system for etching a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3669768