Semiconductor device manufacturing methods utilizing a predeterm

Details Semiconductor device manufacturing methods utilizing a predeterm Semiconductor device manufacturing methods utilizing a predeterm

1979-08-06

1981-07-21

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148174, 156610, 156612, 252 6236A, 357 13, 357 15, 357 64, 357 89, 427 85, 427 87, 4272551, 4272481, H01L 21205, H01L 29207

Patent

active

042796709

ABSTRACT:
A method for producing doped gallium arsenide semiconductor layers for semiconductor devices wherein a predetermined flow of a reactive substance is directed over a material having a dopant and a relatively low vapor pressure. The reactive substance chemically reacts with the material to produce a corresponding flow of a doping vapor. The doped gallium arsenide semiconductor layer is deposited on a gallium arsenide substrate by vapor phase epitaxy from material including the doping vapor. With such method, accurate control of the magnitude of the dopant is obtained by control of the reactive substance, the doping material being supplied by a non-volatile source.

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