Semiconductor device manufacturing methods

Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation

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21912167, 2191217, 21912172, B05D 306

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049064916

ABSTRACT:
In a photoelectric conversion device manufacturing method which includes at least a step of forming a non-single-crystal semiconductor layer, a transparent or nontransparent layer, or a laminate member composed of transparent and nontransparent layers by patterning with a laser beam, a laser beam which has a short wavelength of 600 nm or less, a spot diameter of 3 to 60 nm and a width of 50 nano-second is used for the patterning.

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