Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-05-24
2005-05-24
Schillinger, Laura (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S049000
Reexamination Certificate
active
06897477
ABSTRACT:
A multi-gate structure is used and a width (d1) of a high concentration impurity region sandwiched by two channel forming regions in a channel length direction is set to be shorter than a width (d2) of low concentration impurity regions in the channel length direction. Thus, a resistance of the entire semiconductor layer of a TFT which is in an on state is reduced to increase an on current. In addition, a carrier life time due to photoexcitation produced in the high concentration impurity region can be shortened to reduce light sensitivity.
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Hara et al., “Ultra-high Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization”, Digest of Technical Papers, AM-LCD, Jul. 11-13, 2001, PPL 227-230.
Maekawa Shinji
Shibata Hiroshi
Costellia Jeffrey L.
Nixon & Peabody LLP
Schillinger Laura
Semiconductor Energy Laboratory Co,. Ltd.
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