Semiconductor device, manufacturing method thereof,...

Details Semiconductor device, manufacturing method thereof,... Semiconductor device, manufacturing method thereof,...

2011-08-30

2011-08-30

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S737000

Reexamination Certificate

active

08008772

ABSTRACT:
A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50 μm and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode.

REFERENCES:
patent: 2006/0022326 (2006-02-01), Morita et al.
patent: 2006/0267218 (2006-11-01), Hozoji et al.
patent: 2007/0216012 (2007-09-01), Hozoji et al.
patent: 2004-107728 (2004-04-01), None

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