Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2005-03-01
2005-03-01
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S308000, C438S048000, C117S004000
Reexamination Certificate
active
06861328
ABSTRACT:
An a-Si film is patterned into a linear shape (ribbon shape) or island shape on a glass substrate. The upper surface of the a-Si film or the lower surface of the glass substrate is irradiated and scanned with an energy beam output continuously along the time axis from a CW laser in a direction indicated by an arrow, thereby crystallizing the a-Si film. This implements a TFT in which the transistor characteristics of the TFT are made uniform at high level, and the mobility is high particularly in a peripheral circuit region to enable high-speed driving in applications to a system-on glass and the like.
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Hara Akito
Sasaki Nobuo
Takeuchi Fumiyo
Yoshino Kenichi
Everhart Caridad
Greer Burns & Crain Ltd
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