Semiconductor device, manufacturing method therefor, and...

Semiconductor device manufacturing: process – Making passive device – Resistor

Reexamination Certificate

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C438S308000, C438S048000, C117S004000

Reexamination Certificate

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06861328

ABSTRACT:
An a-Si film is patterned into a linear shape (ribbon shape) or island shape on a glass substrate. The upper surface of the a-Si film or the lower surface of the glass substrate is irradiated and scanned with an energy beam output continuously along the time axis from a CW laser in a direction indicated by an arrow, thereby crystallizing the a-Si film. This implements a TFT in which the transistor characteristics of the TFT are made uniform at high level, and the mobility is high particularly in a peripheral circuit region to enable high-speed driving in applications to a system-on glass and the like.

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