Semiconductor device manufacturing method that recovers...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S689000, C438S719000, C438S723000, C438S745000

Reexamination Certificate

active

07902077

ABSTRACT:
A semiconductor device manufacturing method includes: forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate; etching the etching target film through the etching mask to form a groove or hole in the etching target film; removing the etching mask by a process including at least a process using an ozone-containing gas; and recovering damage of the etching target film caused before or in said removing the etching mask, while supplying a predetermined recovery gas.

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