Semiconductor device manufacturing method, semiconductor...

Details Semiconductor device manufacturing method, semiconductor... Semiconductor device manufacturing method, semiconductor...

2011-07-12

2011-07-12

Young, Christopher G (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S312000, C430S313000, C430S314000, C430S316000, C430S323000, C430S328000, C430S329000, C430S330000

Reexamination Certificate

active

07977019

ABSTRACT:
A semiconductor device manufacturing method, a semiconductor device manufacturing equipment and a computer readable medium storing a computer program provide for easily identifying a cause of a deviation of pattern dimensions from the objective dimension.A first storage section stores a relation between a PEB temperature and a photoresist dimension of a post-lithography. A second storage section stores a relation between a PEB temperature and a post-etching dimension. A primary correction section determines a first corrected PEB temperature for conforming the photoresist dimension of a post-lithography to the objective dimension, using the relation data stored in the first storage section. A secondary correction section determines the second corrected PEB temperature for conforming the post-etching dimension using the first corrected PEB temperature to the objective dimension, using the relation data stored in the second storage section.

REFERENCES:
patent: 2009/0008381 (2009-01-01), Jyousaka et al.
patent: 2006-228816 (2006-08-01), None
patent: 2006-237260 (2006-09-01), None
patent: 2007-35777 (2007-02-01), None
patent: 2007-110080 (2007-04-01), None
patent: WO 2007/032370 (2007-03-01), None
“Across-wafer CD Uniformity Control Through Lithography and Etch Process: Experimental Verification” Qiaolin (Charlie) Zhang, et al., SPIE vol. 6518 65182C-1,2007.

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