Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2009-04-06
2010-12-14
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000, C257SE21114, C257SE21414, C257SE21464, C438S151000
Reexamination Certificate
active
07851803
ABSTRACT:
A semiconductor device includes a substrate and a channel region which is formed above the substrate by printing, wherein a relationship L≧2ais satisfied where L is a channel length of the channel region and a is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as patterns that define the channel length L; and a relationship W≧2bis satisfied where W is a channel width of the channel region and b is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as a pattern that defines the channel width W.
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Higashi Kohei
Nangu Maki
Tanaka Atsushi
Umeda Ken-Ichi
Dang Trung
FUJIFILM Corporation
Sughrue & Mion, PLLC
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