Semiconductor device, manufacturing method of semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S072000, C257SE21114, C257SE21414, C257SE21464, C438S151000

Reexamination Certificate

active

07851803

ABSTRACT:
A semiconductor device includes a substrate and a channel region which is formed above the substrate by printing, wherein a relationship L≧2ais satisfied where L is a channel length of the channel region and a is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as patterns that define the channel length L; and a relationship W≧2bis satisfied where W is a channel width of the channel region and b is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as a pattern that defines the channel width W.

REFERENCES:
patent: 6583776 (2003-06-01), Yamazaki et al.
patent: 2006/0055314 (2006-03-01), Nakamura et al.
patent: 2007/0057261 (2007-03-01), Jeong et al.
patent: 2009/0027580 (2009-01-01), Kurokawa et al.
patent: 2009/0102360 (2009-04-01), Kawakami et al.
patent: 2003-508807 (2003-03-01), None
patent: 2007-81362 (2007-03-01), None
patent: 2007-088001 (2007-04-01), None
patent: 01/17029 (2001-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device, manufacturing method of semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, manufacturing method of semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, manufacturing method of semiconductor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4214736

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.