Semiconductor device manufacturing method including plasma etchi

Details Semiconductor device manufacturing method including plasma etchi Semiconductor device manufacturing method including plasma etchi

1999-01-12

2000-06-06

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

156345, 438720, H01L 2100

Patent

active

060718285

ABSTRACT:
A carbon-containing film, which is made of a carbon-containing material, is adhered to the inner wall of a chamber. A semiconductor substrate is arranged in the chamber whose inner wall has the carbon-containing film adhered thereto. A plasma of a process gas which contains a rare gas is generated in the chamber, and such an electric field as to cause ions contained in the plasma to be attracted to a surface of the semiconductor substrate is applied in order to etch a part of the surface layer of the semiconductor substrate. During the etching, a film which contains a constituent or constituents of an etched film adheres to the surface of the carbon-containing film. The carbon-containing film prevents the peeling off of such an adhering film from the inner wall of the chamber, thereby reducing the generation of particles.

REFERENCES:
patent: 5268200 (1993-12-01), Steger
patent: 5443686 (1995-08-01), Jones et al.

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