Semiconductor device manufacturing method capable of correctly f

Details Semiconductor device manufacturing method capable of correctly f Semiconductor device manufacturing method capable of correctly f

1993-07-22

1995-01-17

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437905, 148DIG95, H01L 21205

Patent

active

053825438

ABSTRACT:
In a method of manufacturing a semiconductor device, first strip dielectrics (33) and surfaces (35) were formed by taking first strip parts (31) of a dielectric layer (29) away from a principal surface (13) of a semiconductor substrate (11) in parallel by using a photo-lithography method. Active regions (43) were formed on the first strip surfaces (35) by using a metal organic vapor phase epitaxy method to be covered with lattice planes each of which is (111)B. Second strip dielectrics (35) and surfaces (47) were formed by taking second strip parts (31a) of the first strip dielectrics (31) away from the principal surface (13) with the second strip surfaces (47) positioned between the active regions (43) and the second strip dielectrics (45). Current block regions (57) were formed on the second strip surfaces (47) and the active regions (43) by using the metal organic vapor phase epitaxy method.

REFERENCES:
patent: 4835117 (1989-05-01), Ohba et al.
patent: 4950622 (1990-08-01), Kwon et al.
patent: 5250462 (1993-10-01), Sasaki et al.
patent: 5260230 (1993-11-01), Kondo

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