Semiconductor device, manufacturing method, and system

Details Semiconductor device, manufacturing method, and system Semiconductor device, manufacturing method, and system

1994-03-31

2000-09-05

Chang, Joni Y.

Coating apparatus

Gas or vapor deposition

Multizone chamber

118723MR, C23C 1600

Patent

active

061137014

ABSTRACT:
An improved semiconductor device manufacturing system and method is shown. In the system, undesirable sputtering effect can be averted by virtue of a combination of an ECR system and a CVD system. Prior to the deposition according to the above combination, a sub-layer can be pre-formed on a substrate in a reaction chamber and transported to another chamber in which deposition is made according to the combination without making contact with air, so that a junction thus formed has good characteristics.

REFERENCES:
patent: 3644931 (1972-02-01), Gerstenberg
patent: 3785853 (1974-01-01), Kirkman
patent: 3911579 (1975-10-01), Lane et al.
patent: 4141811 (1979-02-01), Yerkes
patent: 4171235 (1979-10-01), Fraas et al.
patent: 4226208 (1980-10-01), Nishida
patent: 4262631 (1981-04-01), Kuback
patent: 4264393 (1981-04-01), Gorin et al.
patent: 4274936 (1981-06-01), Love
patent: 4282267 (1981-08-01), Kuyel
patent: 4317844 (1982-03-01), Carlson
patent: 4363828 (1982-12-01), Brodsky
patent: 4399014 (1983-08-01), Engle
patent: 4401054 (1983-08-01), Matsuo
patent: 4401507 (1983-08-01), Engle
patent: 4421592 (1983-12-01), Shuskus
patent: 4435445 (1984-03-01), Allred et al.
patent: 4438188 (1984-03-01), Shimatani et al.
patent: 4438723 (1984-03-01), Cannella et al.
patent: 4461783 (1984-07-01), Yamazaki
patent: 4464415 (1984-08-01), Yamazaki
patent: 4481229 (1984-11-01), Suzuki
patent: 4485125 (1984-11-01), Izu et al.
patent: 4492716 (1985-01-01), Yamazaki
patent: 4515107 (1985-05-01), Fournier et al.
patent: 4522663 (1985-06-01), Ovshinsky
patent: 4532199 (1985-07-01), Ueno
patent: 4534816 (1985-08-01), Chen et al.
patent: 4537795 (1985-08-01), Nath
patent: 4544423 (1985-10-01), Tsuge et al.
patent: 4579609 (1986-04-01), Reif et al.
patent: 4582720 (1986-04-01), Yamazaki
patent: 4592306 (1986-06-01), Gallego
patent: 4608063 (1986-08-01), Kurokawa
patent: 4613400 (1986-09-01), Tam
patent: 4615298 (1986-10-01), Yamazaki
patent: 4624736 (1986-11-01), Gee
patent: 4636401 (1987-01-01), Yamazaki
patent: 4664769 (1987-05-01), Cuomo
patent: 4798166 (1989-01-01), Hirooka
patent: 4800174 (1989-01-01), Ishihara et al.
patent: 4808553 (1989-02-01), Yamazaki
patent: 4808554 (1989-02-01), Yamazaki
patent: 4825808 (1989-05-01), Takahashi
patent: 4951601 (1990-08-01), Maydan
patent: 5000113 (1991-03-01), Wang et al.
Bunshah, Deposition Technologies for Films and Coatings, Noyes Publications, Park Ridge N.J.,.COPYRGT.1982, p. 376.
"Reactive Bean Ion Etching Using A Broad Beam ECR Ion Source", S. Matsuo and Y. Adachi, Japanese Journal of Applied Physica vol. 21 No. 1, Jan., 1982, pp. L4-L6.
"High Conductive Wide Band Gap P-Type a-S:C:H Prepared by ECR CVD and Its Application to High Efficiency a-S: Basis Solar Cells", Y. Hattori et al. pp. 1-6, Presented at IEEE PVSC (New Orleans) May 4-8, 1987.
Dylla "Turbomolecular Pump Vacuum System for the Princeton Large Torus", J. Vac. Sci. & Tech, vol. 15, No. 2, pp. 734-740, 1978.
Outlaw, "Ultrahigh Vacuum Produced by a Combination of Turbomolecular and Titanium Sublimation Pumping", J. Vac. Sci. & Tech., vol. 3, No. 6, pp. 352-354, 1966.
Weil et al., "Glow-Discharge a-SiiF Prepared from SiF.sub.2 Gas", Journal de Physique, Oct. 1981, pp. 643-646.
Maissel et al., Handbook of Thin Film Technology, McGraw-Hill Book Company, pp. 2-4 to 2-9.
English Translation of Japanese Patent Laid-Open 60-194060, published: Oct. 2, 1985; Inventor: Hideo Shibata.
C.C. Tsai et al., Journal of Non-Crystalline Solids, vol. 59 & 60, Dec. 1983, Part II, pp. 649-1326.

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