Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1995-11-09
1999-11-02
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
Multizone chamber
118723MW, 118723MR, 118723MP, 31511141, C23C 1600
Patent
active
059762594
ABSTRACT:
An improved semiconductor device manufacturing system and method is shown. In the system, undesirable sputtering effect can be averted by virtue of a combination of an ECR system and a CVD system. Prior to the deposition according to the above combination, a sub-layer can be pre-formed on a substrate in a reaction chamber and transported to another chamber in which deposition is made according to the combination without making contact with air, so that a junction thus formed has good characteristics.
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Breneman R. Bruce
Costellia Jeffrey L.
Fergusen, Jr. Gerald J.
Lund Jeffrie R
Semiconductor Energy Laboratory Co,. Ltd.
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