Semiconductor device manufacturing method and semiconductor devi

Fishing – trapping – and vermin destroying

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437 41, 437 34, 437 57, 257327, H01L 21265

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052121054

ABSTRACT:
A method for manufacturing a semiconductor device comprises the steps of forming a polysilicon spacer on an after-oxide film on a semiconductor substrate, doping the polysilicon spacer by ion-implanting an impurity such as phosphorus, thermally diffusing the impurity into the polysilicon spacer, and eliminating the polysilicon spacer in part by etching. A semiconductor device manufactured by this method is also disclosed.

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