Semiconductor device manufacturing method and semiconductor...

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C430S312000, C430S313000, C430S316000, C716S030000

Reexamination Certificate

active

11070097

ABSTRACT:
In a semiconductor device manufacturing method, the step of calculating an exposure time of a photoresist includes (a) a step of deciding whether or not a variation of a line width of a device pattern104or a resist pattern102ain a reference chip in a plurality of semiconductor wafers101that are manufactured in the past and have the same wafer information as an subject semiconductor wafer101is contained within a tolerance over a plurality of semiconductor wafers101in the past, and (b) a step of correcting the exposure time every chip by using an exposure correction table22if it is decided in the step (a) that the variation falls within the tolerance.

REFERENCES:
patent: 6599670 (2003-07-01), Ikuno et al.
patent: 6756168 (2004-06-01), Yu et al.
patent: 5-47893 (1993-02-01), None
patent: 11-186132 (1999-07-01), None
patent: 2000-49068 (2000-02-01), None
patent: 2000-235945 (2000-08-01), None
patent: 2000-277423 (2000-10-01), None
patent: 2001-144004 (2001-05-01), None
patent: 2001-338865 (2001-12-01), None

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