Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2005-07-19
2005-07-19
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S781000, C257S782000, C257S672000, C257S734000, C257S779000, C257S676000, C257S670000, C257S692000, C257S723000, C257S724000, C257S288000, C257S773000, C257S776000, C257S775000, C257S666000, C257S674000
Reexamination Certificate
active
06919644
ABSTRACT:
A method of manufacturing a semiconductor device involves mounting a semiconductor chip, formed on top with a main electrode and a subelectrode smaller in area than the main electrode, on a die pad of an external lead frame through a first bonding material, mounting an inner lead frame in which plural inner leads for connecting the main electrode and the subelectrode on the chip to corresponding connecting pads of the external lead frame are joined together by a tie bar on the chip and the external lead frame through a second bonding material, heating the first and second bonding materials simultaneously for electrically connecting and fixing the chip to the die pad and the inner leads to the electrodes on the chip and the connecting pads of the external lead frame, and cutting the tie bar to separate the inner lead frame into the plural inner leads.
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Im Junghwa
Lee Eddie
LandOfFree
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