Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2007-11-16

2009-12-15

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S036000, C438S041000

Reexamination Certificate

active

07632695

ABSTRACT:
A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate. A gallium nitride substrate is prepared which has an upper surface having an off-angle of not less than 0.1° nor more than 1.0° in a <1-100> direction, with respect to a (0001) plane. Then, a plurality of nitride semiconductor layers including an n-type semiconductor layer are stacked on the upper surface of the gallium nitride substrate to form a semiconductor device such as a semiconductor laser.

REFERENCES:
patent: 6252255 (2001-06-01), Ueta et al.
patent: 6841274 (2005-01-01), Ueno et al.
patent: 7462882 (2008-12-01), Ueta et al.
patent: 7498608 (2009-03-01), Ito et al.
patent: 7579627 (2009-08-01), Ueta et al.
patent: 2001/0030329 (2001-10-01), Ueta et al.
patent: 2003/0001238 (2003-01-01), Ban
patent: 2005/0042787 (2005-02-01), Ito et al.
patent: 2005/0141577 (2005-06-01), Ueta et al.
patent: 2006/0202188 (2006-09-01), Ueta et al.
patent: 2009/0011530 (2009-01-01), Ito et al.
patent: 2009/0236585 (2009-09-01), Ueta et al.
patent: 2000-82676 (2000-03-01), None
patent: 2000-223743 (2000-08-01), None
patent: 2001-322899 (2001-11-01), None
patent: 2003-60318 (2003-02-01), None
patent: 2003-327497 (2003-11-01), None
patent: 2004-87565 (2004-03-01), None
patent: 2004-104089 (2004-04-01), None
patent: 2004-146420 (2004-05-01), None
patent: 2004-327655 (2004-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor device manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4069701