Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2005-09-14
2008-08-19
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S465000, C257S701000, C257SE21010
Reexamination Certificate
active
07413931
ABSTRACT:
The invention is directed to improvement of reliability of a chip size package type semiconductor device in a manufacturing method thereof. A support body is formed on a front surface of a semiconductor substrate with a first insulation film therebetween. Then, a part of the semiconductor substrate is selectively etched from its back surface to form an opening, and then a second insulation film is formed on the back surface. Next, the first insulation film and the second insulation film at a bottom of the opening are selectively etched, to expose pad electrodes at the bottom of the opening. Then, a third resist layer is selectively formed on a second insulation film at boundaries between sidewalls and the bottom of the opening on the back surface of the semiconductor substrate. Furthermore, a wiring layer electrically connected with the pad electrodes at the bottom of the opening and extending onto the back surface of the semiconductor substrate is selectively formed corresponding to a predetermined pattern.
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European Search Report mailed Feb. 13, 2006, directed to EP 05020906.3.
Iida Masanori
Noma Takashi
Okada Kazuo
Yamada Hiroshi
Morrison & Foerster / LLP
Rohm Emily
SANYO Electric Co., Ltd.
Sarkar Asok K.
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