Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2008-03-04

2008-03-04

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S197000, C438S201000, C438S396000, C438S482000, C438S486000, C438S509000, C438S630000, C438S253000, C438S239000, C257SE21008, C257SE21208, C257SE21296

Reexamination Certificate

active

11235362

ABSTRACT:
A semiconductor device manufacturing method, includes a step of forming refractory metal silicide layers13ato13cin a partial area of a semiconductor substrate10, a step of forming an interlayer insulating film21on the refractory metal silicide layers13ato13c, a step of forming a first conductive film31, a ferroelectric film32, and a second conductive film33in sequence on the interlayer insulating film21, a step of forming a capacitor Q consisting of a lower electrode31a, a capacitor dielectric film32a, and an upper electrode33aby patterning the first conductive film33, the ferroelectric film32, and the second conductive film31, and a step of performing an annealing for an annealing time to suppress a agglomeration area of the refractory metal silicide layers13ato13cwithin an upper limit area.

REFERENCES:
patent: 2006/0079074 (2006-04-01), Jung et al.
patent: 6-21333 (1994-01-01), None
patent: 2003-303786 (2003-10-01), None
patent: 2003-347311 (2003-12-01), None

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