Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Reexamination Certificate
2006-02-28
2006-02-28
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
C257S066000, C257S064000, C257S063000, C257S051000
Reexamination Certificate
active
07005676
ABSTRACT:
There is here disclosed a semiconductor device manufacturing method comprising a step of forming an island region including a monocrystalline Si1-x-yGexCylayer (1>x>0, 1>y≧0) and a peripheral region including an amorphous or polycrystalline Si1-x-yGexCylayer which surrounds the island region on a monocrystalline Si layer on an insulating film, a step of subjecting the respective Si1-x-yGexCylayers to heat treatment, and after the heat treatment and the removal of a surface oxide film, a step of forming a monocrystalline Si1-z-wGezCwlayer (1>z≧0, 1>w≧0) which becomes an element formation region on the island region.
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Takagi Shin-ichi
Tezuka Tsutomu
Flynn Nathan J.
Mandala Jr. Victor A.
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