Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2006-08-22

2006-08-22

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S050000, C438S052000, C257S415000, C257S417000

Reexamination Certificate

active

07094620

ABSTRACT:
A semiconductor device manufacturing method includes forming an insulating layer on a semiconductor substrate, forming, over the insulating layer, a first sacrificial layer having a first opening, and forming, on the sacrificial layer, a first electrode and a dummy body between the first electrode and the first opening. A photoresist is formed on the structure obtained by the previous steps, the photoresist having a second opening that opens inside the first opening. The insulating layer is etched using the photoresist as a mask to expose the semiconductor substrate, and a second electrode is formed in contact with the exposed semiconductor substrate. The sacrificial layer is removed.

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