Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

1987-11-10

1989-02-28

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437 4, 437105, 427 39, 427 452, 427 47, 427 74, 136258, H01L 21203

Patent

active

048085537

ABSTRACT:
An improved semiconductor device manufacturing system and method is shown. In the system, undesirable sputtering effect can be averted by virtue of a combination of an ECR system and a CVD system. Prior to the deposition according to the above combination, a sub-layer can be pre-formed on a substrate in a reaction chamber and transported to another chamber in which deposition is made according to the combination without making contact with air, so that a junction thus formed has good characteristics.

REFERENCES:
patent: 4532199 (1985-07-01), Ueno et al.
patent: 4568626 (1986-02-01), Ogawa
Y. Kuwano et al., Chapter 3.5, "Tetrahedral Alloys", Jarect vol. 16, Amorphous Semiconductor Technologies & Devices (1984), Y. Hamakawa, Editor, pp. 108-118.

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