Semiconductor device manufacturing method

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C430S022000, C430S312000, C430S322000, C264S040500, C264S494000, C264S496000

Reexamination Certificate

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07914958

ABSTRACT:
A semiconductor device manufacturing method has forming a first resist pattern on the semiconductor substrate, and then, forming a first pattern on the semiconductor substrate by the use of the first resist pattern, and forming a second resist pattern on the semiconductor substrate by using an imprinter, and then, forming a second pattern on the semiconductor substrate by the use of the second resist pattern. The forming the first pattern, the first pattern smaller than a design pattern corresponding to the design data for forming a plurality of patterns on a semiconductor substrate being formed.

REFERENCES:
patent: 6916585 (2005-07-01), Sreenivasan et al.
patent: 7115525 (2006-10-01), Abatchev et al.
patent: 7537866 (2009-05-01), King Liu
patent: 7560201 (2009-07-01), Liu
patent: 2007-15375 (2007-01-01), None

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