Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2011-03-29
2011-03-29
Young, Christopher G (Department: 1721)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
C430S022000, C430S312000, C430S322000, C264S040500, C264S494000, C264S496000
Reexamination Certificate
active
07914958
ABSTRACT:
A semiconductor device manufacturing method has forming a first resist pattern on the semiconductor substrate, and then, forming a first pattern on the semiconductor substrate by the use of the first resist pattern, and forming a second resist pattern on the semiconductor substrate by using an imprinter, and then, forming a second pattern on the semiconductor substrate by the use of the second resist pattern. The forming the first pattern, the first pattern smaller than a design pattern corresponding to the design data for forming a plurality of patterns on a semiconductor substrate being formed.
REFERENCES:
patent: 6916585 (2005-07-01), Sreenivasan et al.
patent: 7115525 (2006-10-01), Abatchev et al.
patent: 7537866 (2009-05-01), King Liu
patent: 7560201 (2009-07-01), Liu
patent: 2007-15375 (2007-01-01), None
Inanami Ryoichi
Inoue Hirofumi
Mikami Shinji
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Young Christopher G
LandOfFree
Semiconductor device manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device manufacturing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2750634