Semiconductor device manufacturing method

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21502, C438S127000

Reexamination Certificate

active

07888173

ABSTRACT:
A semiconductor device manufacturing method includes the steps of preparing a semiconductor element having a first electrode, a second electrode, and a third electrode facing the first electrode and second electrode, the first electrode and second electrode being electrically separated by an insulating layer; arranging a first conductive bonding material on a first metal foil and placing the semiconductor element on the first conductive bonding material; supporting a sheet-shape second conductive bonding material by the insulating layer; arranging a first post electrode and a second post electrode above the first and second electrodes respectively with the second conductive bonding material intervening therebetween; and forming a first conductive bonding layer for bonding the first electrode and the first post electrode, a second conductive bonding layer for bonding the second electrode and the second post electrode, and a third conductive bonding layer for bonding the third electrode and the first metal foil.

REFERENCES:
patent: 6399426 (2002-06-01), Capote et al.
patent: 2006/0220213 (2006-10-01), Kondou et al.
patent: 2007/0048900 (2007-03-01), Jiang et al.
patent: 2003-273357 (2003-09-01), None
patent: 2003-289130 (2003-10-01), None
patent: 2004-228403 (2004-08-01), None
patent: 2005-19830 (2005-01-01), None
patent: 2005-116702 (2005-04-01), None
patent: 2006-237429 (2006-09-01), None
patent: 2006-261168 (2006-09-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device manufacturing method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2635624

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.