Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

1992-01-10

1994-04-12

Maples, John S.

Fishing, trapping, and vermin destroying

437225, 437247, H01L 21441, H01L 21324

Patent

active

053025482

ABSTRACT:
A semiconductor device includes at least one wiring layer containing aluminum as the major constituent and provided through an insulating film on a semiconductor substrate on which components or elements are formed, and a heat resistant high molecular organic film having a radical of small water absorbing property provided on side surfaces of the wiring layer. The heat resisting high molecular organic film is preferably formed of polyphenylene sulfide. A method of the semiconductor device includes the steps of forming components on a semiconductor substrate, forming an insulating film on the components to form an aluminum wiring layer by deposition and patterning, depositing a heat resistant high molecular organic film having a radical of small water absorbing property, and heating the heat resistant high molecular organic film at a temperature to fluidify to and flatten the heat resistant high molecular organic film. An inorganic layer is deposited as a protective layer.

REFERENCES:
patent: 4505029 (1985-03-01), Owyang et al.
patent: 4507333 (1985-03-01), Baise et al.
patent: 4520041 (1985-05-01), Aoyama et al.
patent: 4528346 (1985-07-01), Sugie et al.
patent: 4613888 (1986-09-01), Mase et al.

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