Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

1996-03-08

2000-10-31

Bowers, Charles

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438694, 438703, 438906, C03C 1500, B44C 122

Patent

active

061402478

ABSTRACT:
A semiconductor device manufacturing method includes the step of forming a silicon oxide film on the surface of a silicon region, and the step of supplying anhydrous hydrofluoric acid gas to the silicon oxide film, thereby removing the silicon oxide film. The total concentration of Si--H bonds, Si--O--H bonds, and H.sub.2 O molecules, in the silicon oxide film is 1.times.10.sup.13 /cm.sup.2 or more.

REFERENCES:
patent: 2948642 (1960-08-01), MacDonald
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4857142 (1989-08-01), Syverson
patent: 5073232 (1991-12-01), Ohmi et al.
patent: 5439553 (1995-08-01), Grant et al.
patent: 5693578 (1997-12-01), Nakanishi et al.
patent: 5716495 (1998-02-01), Butterbaugh et al.
patent: 5922624 (1999-07-01), Verhaverbeke
Wolf, Stanley, Silicon Processing for the VLSI Era, vol. 1, pp. 516-520, 1986.
Wolf, Stanley, Silicon Processing for the VLSI Era, vol. 2, pp. 21-26, 1990.
Ghandhi, Sorab, VLSI Fabrication Principles, p. 373, 1983.
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, pp. 496-498, 1991, B.E. Deal, et al., "New Techniques in Vapor Phase Wafer Cleaning".
J. Vac. Sci. Technol., vol. 10, No. 4, pp. 806-811, Jul./Aug. 1992, C.R. Helms, et al., "Mechanisms of the HF/H.sub.2 O Vapor Phase Etching of SiO.sub.2 ".
J. Electrochem. Soc., vol. 140, No. 4, pp. L64-L66, Apr. 1993, J. Ruzyllo, et al., "Etching of Thermal Oxides in Low Pressure Anhydrous HF/CH.sub.3 OH Gas Mixture at Elevated Temperature".

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