Semiconductor device manufacturing by sequential ion and wet etc

Details Semiconductor device manufacturing by sequential ion and wet etc Semiconductor device manufacturing by sequential ion and wet etc

1986-03-31

1988-07-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437238, 437241, 437944, 156644, 156653, H01L 21441

Patent

active

047570334

ABSTRACT:
The semiconductor device includes a semiconductor substrate, a two-layer insulating film formed on the substrate and constituted by upper and lower insulating layers made of insulating materials different, in chemical properties, from each other, respectively, an electrode and a first level interconnection such that the electrode and the first level interconnection are embedded in an opening formed on the two-layer insulating film.

REFERENCES:
patent: 4440804 (1984-04-01), Milgram
patent: 4451971 (1984-06-01), Milgram
patent: 4484978 (1984-11-01), Keyser
patent: 4497684 (1985-02-01), Sebesta
patent: 4519872 (1985-05-01), Anderson, Jr. et al.
patent: 4532002 (1985-07-01), White
patent: 4533431 (1985-08-01), Dargent
patent: 4539222 (1985-09-01), Anderson, Jr. et al.
patent: 4564997 (1986-01-01), Matsuo et al.
patent: 4575402 (1986-03-01), Marcoux et al.

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