Semiconductor device manufacturing apparatus, method for removin

Details Semiconductor device manufacturing apparatus, method for removin Semiconductor device manufacturing apparatus, method for removin

1995-06-29

1998-08-18

Breneman, R. Bruce

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

156345, 216 67, 216 71, 118719, B08B 600, C23F 102, B44C 122

Patent

active

057953996

ABSTRACT:
A plasma etching apparatus has a first load-lock chamber, a process chamber connected to the first load-lock chamber through a gate valve, and a second load-lock chamber connected to the process chamber through another gate valve. A first processing section is provided to the process chamber to etch a wafer. A second processing section is provided to the second load-lock chamber to remove a reaction product generated during etching from the wafer. In the second processing section, an ultrasonic wave is applied to the wafer, thereby removing the reaction product from the wafer.

REFERENCES:
patent: 5277740 (1994-01-01), Yoneda
patent: 5520784 (1996-05-01), Ward
patent: 5531862 (1996-07-01), Otsubo et al.

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