Semiconductor device manufacturing apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118723E, 118723MW, 118723MR, 118723AN, 118723R, 118666, 216 61, H01L 2100, C23C 1600

Patent

active

054338131

ABSTRACT:
In a semiconductor device manufacturing apparatus of a reactive ion etching apparatus or the like, only a DC signal in a high frequency electric field can be accurately detected in a real-time manner without any noise, thereby enabling a temperature, a potential, or another parameter of a substrate (wafer) to be accurately measured. For this purpose, according to this manufacturing apparatus, a transmission line filter (coaxial cable) 8 having an electric length ((2n+1).lambda./4) that is an odd-number times as long as 1/4 of the wavelength .lambda. of a high frequency power source 1 is connected between a thermocouple or electrode 7 and a voltmeter 10 to measure a temperature or another parameter of a wafer (substrate) 5. A high frequency signal is separated by the transmission line filter, and a high frequency impedance is short-circuited by a capacitance 9 resulting in the high frequency component being removed, and only a DC signal being provided to the voltmeter 10.

REFERENCES:
patent: 5231690 (1993-07-01), Soma et al.
patent: 5232509 (1993-08-01), Min et al.
"The Study of Semiconductor," Edited by Nishizawa, Kogyo Chosakai, vol. 17, p. 227 et seq.

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