Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1997-06-27
1998-09-29
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118724, 118725, 118729, 118715, C23C 1600
Patent
active
058141537
ABSTRACT:
To provide a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus in which both a dependency on base material and a film characteristic are satisfied in film forming steps of the semiconductor manufacturing. There are provided a first film forming part 4 and a second film forming part 5 along a transporting direction A in the transporting system 1 for the semiconductor substrate 2, the first film forming part 4 is provided with a post-mixed type gas supplying means 7 for supplying a plurality of kinds of reaction gases onto a semiconductor substrate while the gases are being separated from each other through an inert gas, and the second film forming part 5 is provided with a premixed type gas supplying means 8 for supplying the mixture gas onto the semiconductor substrate while a plurality of kinds of reaction gases are mixed in advance.
REFERENCES:
patent: 5518962 (1996-05-01), Murao
Bueker Richard
Sony Corporation
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